Aging impact of the 4H-SiC MOSFET SiO$_2$ gate dielectric
Résumé
Silicon Carbide (SiC) devices are a technology used for power electronics and especially for automotive applications. For MOSFET devices, an aging of the Gate oxide with dynamical HTGB stress called GSS on a commercial device permits a better understanding of the failure mechanism occurring on the device during use. Electrical static characterization Ids-Vds and Ids-Vgs, Raman spectroscopy, Atomic Force Microscope associated with a "resiscope" and Transmission Electronic Microscopy analyses are used to determine the composition of the oxide design and the origin of the failure mechanism. An electrical modification related to a nanometer scale material variation with platelet apparition is detected through the oxidation.
Domaines
Energie électrique
Fichier principal
ESREF_2024_Aging impact of the SiC Mosfet gate dielectric_abstract.pdf (463.43 Ko)
Télécharger le fichier
| Origine | Fichiers produits par l'(les) auteur(s) |
|---|